Impact of GigaRad Ionizing Dose\ud on 28 nm Bulk MOSFETs for Future HL-LHC

摘要

The Large Hadron Collider (LHC) running at\udCERN will soon be upgraded to increase its luminosity giving rise\udto radiations reaching the level of GigaRad Total Ionizing Dose\ud(TID). This paper investigates the impact of such high radiation\udon transistors fabricated in a commercial 28 nm bulk CMOS\udprocess with the perspective of using it for the future siliconbased\uddetectors. The DC electrical behavior of nMOSFETs is\udstudied up to 1 Grad TID. All tested devices demonstrate to\udwithstand that dose without any radiation-hard layout techniques.\udIn spite of that, they experience a significant drain leakage\udcurrent increase which may affect normal device operation. In\udaddition, a moderate threshold voltage shift and subthreshold\udslope degradation is observed. These phenomena have been linked\udto radiation-induced effects like interface and switching oxide\udtraps, together with parasitic side-wall transistors.